256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
FEATURES
• Fast Access Time 10ns(Max.)
• Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
Operating K6R1004C1D-10: 65mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation - No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration :
K6R1004C1C-J : 32-SOJ-400
K6R1004C1C-K : 32-SOJ-400(Lead-Free)
• Operating in Commercial and Industrial Temperature range.
GENERAL DESCRIPTION
The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1004C1D is packaged in a 400 mil 32-pin plastic SOJ.
ABSOLUTE MAXIMUM RATINGS*
| Parameter | Symbol | Rating | Unit |
| Voltage on Any Pin Relative to VSS | VIN, VOUT | -0.5 to Vcc+0.5V | V |
| Voltage on VCC Supply Relative to VSS | VCC | -0.5 to 7.0 | V |
| Power Dissipation | Pd | 1 | W |
| Storage Temperature | TSTG | -65 to 150 | °C |
| Operating Temperature | Commercial | TA | 0 to 70 | °C |
| Industrial | TA | -40 to 85 | °C |
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION(Top View)
PACKAGE DIMENSIONS
32-SOJ-400 Units:millimeters/Inches
Product Tags:
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