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RF Integrated Circuit Chip BYG23M-E3-TR Ultrafast Avalanche SMD Rectifier

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RF Integrated Circuit Chip BYG23M-E3-TR Ultrafast Avalanche SMD Rectifier

Name: RF Integrated Circuit Chip BYG23ME3TR Ultrafast Avalanche SMD Rectifier
Brand: VISHAY
Price: 1 USD

Wholesale RF Integrated Circuit Chip BYG23M-E3-TR Ultrafast Avalanche SMD Rectifier from china suppliers

Brand Name : VISHAY

Model Number : BYG23M-E3-TR

Certification : Original Factory Pack

Place of Origin : Malaysia

MOQ : 5pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 1200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

package : Low profile package

Application : Ideal for automated placement

junction : Glass passivated junction

current : Low reverse current

voltage : High reverse voltage

recovery time : Ultra fast reverse recovery time

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RF Integrated Circuit Chip BYG23M-E3-TR Ultrafast Avalanche SMD Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated junction

• Low reverse current

• High reverse voltage

• Ultra fast reverse recovery time

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication.

MECHANICAL DATA

Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER	SYMBOL	BYG23M	UNIT
Device marking code		BYG23M
Maximum repetitive peak reverse voltage	VRRM	1000	V
Average forward current TA = 65 °C	I_F(AV)	1.5	A
Peak forward surge current 10 ms single half sine-wave superimposed on rated load	I_FSM	30	A
Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C	ER	20	mJ
Operating junction and storage temperature range	T_J, T_STG	- 55 to + 150	C

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

RF Integrated Circuit Chip BYG23M-E3-TR Ultrafast Avalanche SMD Rectifier

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

RF Integrated Circuit Chip BYG23M-E3-TR Ultrafast Avalanche SMD Rectifier

Product Tags:

diode rectifier circuit

signal schottky diode

RF Integrated Circuit Chip BYG23M-E3-TR Ultrafast Avalanche SMD Rectifier Images

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