AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor

AON7403 P-Channel Enhancement Mode Field Effect Transistor

General Description

The AON7403/L uses advanced trench technology to provide excellent R_DS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical.

-RoHS Compliant

-AON7403L is Halogen Free

Features

V_DS (V) = -30V

I_D = -8A (V_GS = -10V)

R_DS(ON) < 18mΩ (V_GS = -10V)

R_DS(ON) < 36mΩ (V_GS = -4.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

G. The maximum current rating is limited by bond-wires.

Stock Offer (Hot Sell)

multi emitter transistor

silicon power transistors

AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor Images